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Technical Specifications
Onsemi FQA6N90_F109 technical specifications.
General
| Continuous Drain Current (ID) | 6.4A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1.9R |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.88nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 198W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 198W |
| Rds On Max | 1.9R |
| RoHS Compliant | No |
| Series | QFET™ |
| Turn-Off Delay Time | 95ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQA6N90_F109 Datasheet
Download the complete datasheet for Onsemi FQA6N90_F109 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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