The FQA6N90C is a high-voltage N-channel MOSFET with a breakdown voltage of 900V and a continuous drain current of 6A. It has a drain to source resistance of 2.3 ohms and a gate to source voltage of 30V. The device is rated for operation up to 150°C and is compliant with RoHS regulations. It is packaged in a rail or tube format with 30 devices per package.
PolarityN-CHANNEL
Power198W
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Technical Specifications
Onsemi FQA6N90C technical specifications.
General
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 2.3R |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 198W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 55ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA6N90C Datasheet
Download the complete datasheet for Onsemi FQA6N90C to view detailed technical specifications.
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