N-Channel Power MOSFET featuring 150V drain-source breakdown voltage and 70A continuous drain current. This single element MOSFET offers a low 28mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 330W. Designed for through-hole mounting in a TO-3P package, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 60ns turn-on delay and a 290ns fall time.
Onsemi FQA70N15 technical specifications.
| Continuous Drain Current (ID) | 70A |
| Current Rating | 70A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 150V |
| Element Configuration | Single |
| Fall Time | 290ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 18.9mm |
| Input Capacitance | 5.4nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| Rds On Max | 28mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 340ns |
| Turn-On Delay Time | 60ns |
| DC Rated Voltage | 150V |
| Weight | 6.401g |
| Width | 5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQA70N15 to view detailed technical specifications.
No datasheet is available for this part.
