ONSEMI

FQA85N06

Datasheet

Onsemi

FQA85N06

Name: FQA85N06 Onsemi
Brand: Onsemi
SKU: FQA85N06

N-CH MOSFET 60V 100A 10mR TO-3P

N-channel MOSFET featuring 60V drain-source breakdown voltage and 100A continuous drain current. Offers a low 10mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 214W. Designed for through-hole mounting with a nominal gate-source voltage (Vgs) of 4V and a threshold voltage of 4V. Operates across a wide temperature range from -55°C to 175°C, with a fall time of 170ns. This RoHS compliant component is packaged in a TO-3P package.

Current Rating100A

MountingThrough Hole

PolarityN-CHANNEL

Power214W

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Technical Specifications

Onsemi FQA85N06 technical specifications.

General

Continuous Drain Current (ID)	100A
Current Rating	100A
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	10mR
Drain to Source Voltage (Vdss)	60V
Dual Supply Voltage	60V
Fall Time	170ns
Gate to Source Voltage (Vgs)	25V
Input Capacitance	4.12nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	214W
Mount	Through Hole
Nominal Vgs	4V
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	214W
Rds On Max	10mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	QFET®
Threshold Voltage	4V
Turn-Off Delay Time	175ns
DC Rated Voltage	60V