FQA90N15

N-Channel Power MOSFET featuring 150V drain-source breakdown voltage and 90A continuous drain current. This single-element MOSFET offers a low 18mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 375W. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching characteristics with turn-on delay time of 105ns and fall time of 410ns. The device is packaged in a TO-3P through-hole mount, with a 450-TUBE packaging format.