N-channel power MOSFET with 900V drain-source breakdown voltage and 7.2A continuous drain current. Features 960mΩ maximum drain-source on-resistance and 120W maximum power dissipation. Operates from -55°C to 150°C with a 30V gate-source voltage rating. Packaged in a 3-pin TO-3PF with through-hole mounting. RoHS compliant and lead-free.
Current Rating7.2A
MountingThrough Hole
PolarityN-CHANNEL
Power120W
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Technical Specifications
Onsemi FQAF11N90 technical specifications.
General
| Continuous Drain Current (ID) | 7.2A |
| Current Rating | 7.2A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 960mR |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.7mm |
| Input Capacitance | 3.5nF |
| Lead Free | Lead Free |
| Length | 15.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Rds On Max | 960mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 165ns |
| Turn-On Delay Time | 60ns |
| DC Rated Voltage | 900V |
| Width | 5.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQAF11N90 Datasheet
Download the complete datasheet for Onsemi FQAF11N90 to view detailed technical specifications.
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