N-Channel Power MOSFET featuring 900V drain-to-source breakdown voltage and 7A continuous drain current. This single-element transistor offers 1.1Ω drain-to-source resistance (Rds On Max) and 120W maximum power dissipation. Designed for through-hole mounting in a TO-3PF package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 60ns turn-on delay and 85ns fall time.
PackageSC
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQAF11N90C technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 11A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1.1R |
| Drain to Source Voltage (Vdss) | 900V |
| Element Configuration | Single |
| Fall Time | 85ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 29.9mm |
| Input Capacitance | 3.29nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Rds On Max | 1.1R |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 60ns |
| DC Rated Voltage | 900V |
| Weight | 6.962g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQAF11N90C Datasheet
Download the complete datasheet for Onsemi FQAF11N90C to view detailed technical specifications.
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