N-Channel Power MOSFET, 800V Drain-to-Source Breakdown Voltage, 8A Continuous Drain Current, and 750mΩ Maximum Drain-Source On-Resistance. This single element transistor features a TO-3PF package with through-hole mounting and a maximum power dissipation of 120W. Operating temperature range is -55°C to 150°C, with typical turn-on delay of 60ns and turn-off delay of 155ns. The component is RoHS compliant and lead-free.
PackageSC
Current Rating8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQAF13N80 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 750mR |
| Element Configuration | Single |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.7mm |
| Input Capacitance | 3.5nF |
| Lead Free | Lead Free |
| Length | 15.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Radiation Hardening | No |
| Rds On Max | 750mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 155ns |
| Turn-On Delay Time | 60ns |
| DC Rated Voltage | 800V |
| Weight | 6.962g |
| Width | 5.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQAF13N80 Datasheet
Download the complete datasheet for Onsemi FQAF13N80 to view detailed technical specifications.
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