N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 11.3A continuous drain current. This QFET® series component offers a low 320mΩ drain-to-source resistance and 110W maximum power dissipation. Designed for through-hole mounting in a TO-3PF package, it operates from -55°C to 150°C and includes fast switching characteristics with a 45ns turn-on delay. RoHS compliant and lead-free.
Current Rating11.3A
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Onsemi FQAF16N50 technical specifications.
General
| Continuous Drain Current (ID) | 11.3A |
| Current Rating | 11.3A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 320mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.7mm |
| Input Capacitance | 3nF |
| Lead Free | Lead Free |
| Length | 15.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 320mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 45ns |
| DC Rated Voltage | 500V |
| Weight | 6.962g |
| Width | 5.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQAF16N50 Datasheet
Download the complete datasheet for Onsemi FQAF16N50 to view detailed technical specifications.
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