P-channel MOSFET featuring a 100V drain-to-source breakdown voltage and 12.4A continuous drain current. This through-hole component offers a low Rds On of 190mR, with fast switching characteristics including a 17ns turn-on delay and 45ns turn-off delay. Operating across a wide temperature range from -55°C to 175°C, it supports a maximum power dissipation of 56W. The device is RoHS compliant and lead-free.
Current Rating-12.4A
MountingThrough Hole
PolarityP-CHANNEL
Power56W
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Technical Specifications
Onsemi FQAF17P10 technical specifications.
General
| Continuous Drain Current (ID) | 12.4A |
| Current Rating | -12.4A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 29.4mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 56W |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQAF17P10 Datasheet
Download the complete datasheet for Onsemi FQAF17P10 to view detailed technical specifications.
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