The FQAF33N10 is an N-channel MOSFET with a drain to source breakdown voltage of 100V and a continuous drain current of 25.8A. It has a maximum power dissipation of 83W and is rated for operation between -55°C and 175°C. The device is packaged in a through-hole package and is compliant with RoHS regulations.
Current Rating25.8A
MountingThrough Hole
PolarityN-CHANNEL
Power83W
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Technical Specifications
Onsemi FQAF33N10 technical specifications.
General
| Continuous Drain Current (ID) | 25.8A |
| Current Rating | 25.8A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 52mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Rds On Max | 52mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 80ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQAF33N10 Datasheet
Download the complete datasheet for Onsemi FQAF33N10 to view detailed technical specifications.
No datasheet is available for this part.
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