The FQB10N20LTM is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 87W and a maximum drain to source breakdown voltage of 200V. The device is RoHS compliant and features a package quantity of 800 units per reel. The FQB10N20LTM has a drain to source resistance of 360mR and a turn-off delay time of 50ns. It is suitable for use in a variety of applications requiring high current and voltage handling capabilities.
PackageTO-263-3
Current Rating10A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB10N20LTM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 360mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 95ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 830pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 87W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 50ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB10N20LTM Datasheet
Download the complete datasheet for Onsemi FQB10N20LTM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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