The FQB10N20TM is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current rating of 10A and a drain to source breakdown voltage of 200V. The device has a power dissipation of 3.13W and a maximum Rds on resistance of 360mR. It is packaged in a TO-263-3 package and is RoHS compliant.
PackageTO-263-3
Current Rating10A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB10N20TM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 670pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 26ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB10N20TM Datasheet
Download the complete datasheet for Onsemi FQB10N20TM to view detailed technical specifications.
No datasheet is available for this part.
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