N-Channel Power MOSFET, Logic Level, QFET® series, featuring a 200V Drain-Source Breakdown Voltage and a 21A Continuous Drain Current. This surface-mount device offers a low 140mΩ Drain-Source On-Resistance at a nominal 2V Gate-Source Voltage. Designed for efficient switching, it exhibits a 35ns Turn-On Delay Time and 180ns Fall Time. Packaged in a D2PAK for robust thermal performance, this RoHS compliant component operates from -55°C to 150°C.
PackageD2PAK
Voltage200V
Current17A
Current Rating21A
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Technical Specifications
Onsemi FQB19N20LTM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 21A |
| Current | 17A |
| Current Rating | 21A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 140MR |
| Fall Time | 180ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 2.2nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.13W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 35ns |
| Voltage | 200V |
| DC Rated Voltage | 200V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB19N20LTM Datasheet
Download the complete datasheet for Onsemi FQB19N20LTM to view detailed technical specifications.
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