N-Channel Power MOSFET, QFET® series, featuring a 200V Drain-Source Breakdown Voltage and 19.4A Continuous Drain Current. This surface-mount device in a D2PAK package offers a low 150mΩ Drain-Source On-Resistance. With a maximum power dissipation of 140W and operating temperature range of -55°C to 150°C, it includes fast switching characteristics with a 20ns turn-on delay and 55ns turn-off delay. The component is lead-free and RoHS compliant.
PackageD2PAK
Current Rating19.4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB19N20TM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 19.4A |
| Current Rating | 19.4A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 150mR |
| Element Configuration | Single |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 200V |
| Weight | 1.31247g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB19N20TM Datasheet
Download the complete datasheet for Onsemi FQB19N20TM to view detailed technical specifications.
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