The FQB1N60TM is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 600V and a continuous drain current of 1.2A. The device is packaged in a TO-263-3 case and is lead free. It is RoHS compliant and has a maximum power dissipation of 40W.
PackageTO-263-3
Current Rating1.2A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FQB1N60TM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 1.2A |
| Current Rating | 1.2A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 11.5R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 11.5R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 7ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB1N60TM Datasheet
Download the complete datasheet for Onsemi FQB1N60TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
