P-channel MOSFET in TO-263-3 surface mount package. Features a 250V drain-to-source breakdown voltage and 2.3A continuous drain current. Offers a low Rds(on) of 3.15 Ohms at a Vgs of 10V. Operates from -55°C to 150°C with a maximum power dissipation of 52W. Includes fast switching times with turn-on delay of 8.5ns and fall time of 25ns. RoHS compliant and lead-free.
PackageTO-263-3
Current Rating-2.3A
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FQB2P25TM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 2.3A |
| Current Rating | -2.3A |
| Drain to Source Breakdown Voltage | -250V |
| Drain to Source Resistance | 3.15R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 4R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 8.5ns |
| DC Rated Voltage | -250V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB2P25TM Datasheet
Download the complete datasheet for Onsemi FQB2P25TM to view detailed technical specifications.
No datasheet is available for this part.
Product Images
