N-Channel Power MOSFET, Logic Level, QFET® series, featuring a 60V drain-source breakdown voltage and a continuous drain current of 32A. This single-element transistor offers a low drain-source on-resistance of 35mΩ, ideal for efficient power switching. Packaged in a D2PAK surface-mount case, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 79W. Key switching characteristics include a 15ns turn-on delay and 60ns turn-off delay, with an 110ns fall time. RoHS compliant and lead-free, this component is supplied on an 800-piece tape and reel.
PackageD2PAK
Current Rating32A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB30N06LTM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 32A |
| Current Rating | 32A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 35mR |
| Element Configuration | Single |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.04nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.75W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 60V |
| Weight | 1.31247g |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB30N06LTM Datasheet
Download the complete datasheet for Onsemi FQB30N06LTM to view detailed technical specifications.
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