The FQB32N20CTM is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 156W and a maximum drain to source breakdown voltage of 200V. The device is RoHS compliant and features a package quantity of 800 units per reel. It has a drain to source resistance of 68mR and a gate to source voltage of 30V. The FQB32N20CTM is a lead free device with a maximum current rating of 32A and a continuous drain current of 28A.
PackageTO-263-3
Current Rating32A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB32N20CTM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 28A |
| Current Rating | 32A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 68mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 210ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.22nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 82mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 245ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB32N20CTM Datasheet
Download the complete datasheet for Onsemi FQB32N20CTM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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