N-Channel MOSFET, 800V Drain-Source Breakdown Voltage, 3.9A Continuous Drain Current, 3.6 Ohm Max Drain-Source On Resistance. This single-element QFET® MOSFET features a D2PAK surface-mount package, 3.13W max power dissipation, and operates from -55°C to 150°C. Key electrical characteristics include 30V Gate-Source Voltage, 5V Threshold Voltage, 880pF Input Capacitance, and typical switching times of 16ns turn-on delay and 35ns fall time. RoHS compliant and lead-free.
PackageD2PAK
Current Rating3.9A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB4N80TM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 3.9A |
| Current Rating | 3.9A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 3.6R |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 880pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.13W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 3.6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 800V |
| Weight | 1.31247g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB4N80TM Datasheet
Download the complete datasheet for Onsemi FQB4N80TM to view detailed technical specifications.
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