N-channel power MOSFET, logic level, QFET® series, featuring a 60V drain-source breakdown voltage and 52.4A continuous drain current. This surface-mount component in a D2PAK package offers a low 21mΩ drain-source resistance at Vgs=10V. It operates within a -55°C to 175°C temperature range, with a maximum power dissipation of 121W. Key switching characteristics include a 20ns turn-on delay and 145ns fall time.
PackageD2PAK
Current Rating52.4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB50N06LTM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 52.4A |
| Current Rating | 52.4A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 145ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.63nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 121W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.75W |
| Rds On Max | 21mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 60V |
| Weight | 1.31247g |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB50N06LTM Datasheet
Download the complete datasheet for Onsemi FQB50N06LTM to view detailed technical specifications.
No datasheet is available for this part.
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