N-Channel Power MOSFET, QFET® series, featuring a 60V drain-source breakdown voltage and a continuous drain current of 50A. This surface-mount component offers a low on-resistance of 22mΩ, a maximum power dissipation of 120W, and operates within a temperature range of -55°C to 175°C. Packaged in a D2PAK, it includes fast switching characteristics with turn-on delay time of 15ns and fall time of 65ns.
PackageD2PAK
Current Rating50A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB50N06TM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 4.83mm |
| Input Capacitance | 1.54nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.75W |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 60V |
| Weight | 1.31247g |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB50N06TM Datasheet
Download the complete datasheet for Onsemi FQB50N06TM to view detailed technical specifications.
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