The FQB5N30TM is a surface mount N-channel power MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 70W and a maximum drain to source breakdown voltage of 300V. The device has a continuous drain current of 5.4A and a gate to source voltage of 30V. It is lead free and RoHS compliant.
PackageTO-263-3
Current Rating5.4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB5N30TM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 5.4A |
| Current Rating | 5.4A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 680mR |
| Drain to Source Voltage (Vdss) | 300V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 430pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 900mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 17ns |
| DC Rated Voltage | 300V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB5N30TM Datasheet
Download the complete datasheet for Onsemi FQB5N30TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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