ONSEMI

FQB5N50CFTM

Datasheet

500V 5A N-CH MOSFET, TO-263, 1.55R Rds(on)

Onsemi

FQB5N50CFTM

Name: FQB5N50CFTM Onsemi
Brand: Onsemi
SKU: FQB5N50CFTM

500V 5A N-CH MOSFET, TO-263, 1.55R Rds(on)

N-channel MOSFET, 500V drain-source breakdown voltage, 5A continuous drain current, and 1.3 Ohm drain-source resistance. Features a 4V threshold voltage, 625pF input capacitance, and 48ns fall time. Packaged in a TO-263-3 surface-mount D2PAK, this component offers 96W maximum power dissipation and operates from -55°C to 150°C. RoHS compliant and lead-free.

PackageTO-263-3

Current Rating5A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FQB5N50CFTM technical specifications.

General

Package/Case	TO-263-3
Continuous Drain Current (ID)	5A
Current Rating	5A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	1.3R
Drain to Source Voltage (Vdss)	500V
Fall Time	48ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	625pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	96W
Mount	Surface Mount
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	96W
Rds On Max	1.55R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	FRFET™
Threshold Voltage	4V
Turn-Off Delay Time	50ns
DC Rated Voltage	500V