The FQB5N60CTM is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 4.5A and a drain to source breakdown voltage of 600V. The device is lead free and has a maximum power dissipation of 100W. It features a gate to source voltage of 30V and an input capacitance of 670pF.
PackageTO-263-3
Current Rating5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB5N60CTM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 670pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 2.5R |
| Series | QFET® |
| Turn-Off Delay Time | 38ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB5N60CTM Datasheet
Download the complete datasheet for Onsemi FQB5N60CTM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.