The FQB5N60TM is a surface-mount N-channel MOSFET from Onsemi with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 120W and a DC rated voltage of 600V. The device features a continuous drain current of 5A and a drain to source breakdown voltage of 600V. It is packaged in a TO-263-3 case and is lead-free and RoHS compliant.
PackageTO-263-3
Current Rating5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB5N60TM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 730pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 2R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 35ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB5N60TM Datasheet
Download the complete datasheet for Onsemi FQB5N60TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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