N-channel Power MOSFET featuring 900V drain-source breakdown voltage and 5.4A continuous drain current. Surface mount D2PAK package with 2.3Ω maximum drain-source on-resistance. Operates from -55°C to 150°C with 158W maximum power dissipation. Includes 1.55nF input capacitance and 28ns turn-on delay time.
PackageTO-263
Current Rating5.4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB5N90TM technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 5.4A |
| Current Rating | 5.4A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 2.3R |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 2.3R |
| Element Configuration | Single |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 1.55nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 158W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 2.3R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 28ns |
| DC Rated Voltage | 900V |
| Weight | 1.31247g |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB5N90TM Datasheet
Download the complete datasheet for Onsemi FQB5N90TM to view detailed technical specifications.
No datasheet is available for this part.
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