The FQB5P20TM is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 75W and a maximum drain to source voltage of 200V. The device is lead free and RoHS compliant, and is packaged in a TO-263-3 surface mount package. The FQB5P20TM has a maximum continuous drain current of 4.8A and a maximum drain to source resistance of 1.1R.
PackageTO-263-3
Current Rating-4.8A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQB5P20TM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 4.8A |
| Current Rating | -4.8A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 1.1R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 430pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 12ns |
| DC Rated Voltage | -200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB5P20TM Datasheet
Download the complete datasheet for Onsemi FQB5P20TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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