The Onsemi FQB6N25TM is an N-CHANNEL MOSFET with a maximum drain to source breakdown voltage of 250V and continuous drain current of 5.5A. It has a maximum power dissipation of 63W and a maximum operating temperature of 150°C. The device is packaged in a TO-263-3 surface mount package and is lead free and RoHS compliant. The FQB6N25TM has a gate to source voltage of 30V and an input capacitance of 300pF, with a fall time of 30ns and turn-off delay time of 7.5ns.
PackageTO-263-3
Current Rating5.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB6N25TM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 5.5A |
| Current Rating | 5.5A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 7.5ns |
| DC Rated Voltage | 250V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB6N25TM Datasheet
Download the complete datasheet for Onsemi FQB6N25TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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