The FQB6N40CFTM is a N-CHANNEL MOSFET with a D2PAK package, rated for 6A continuous drain current and 400V drain to source breakdown voltage. It has a drain to source resistance of 900mR and a fall time of 38ns. The device can handle a maximum power dissipation of 113W and operates within a temperature range of -55°C to 150°C. The FQB6N40CFTM is RoHS compliant and available in quantities of 800 per reel.
PackageD2PAK
PolarityN-CHANNEL
Power113W
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Technical Specifications
Onsemi FQB6N40CFTM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 900mR |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 113W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB6N40CFTM Datasheet
Download the complete datasheet for Onsemi FQB6N40CFTM to view detailed technical specifications.
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