
N-Channel Power MOSFET, QFET™ series, featuring a 400V drain-to-source breakdown voltage and 6A continuous drain current. This surface-mount device in a D2PAK package offers a low 1.0Ω maximum drain-to-source resistance. Key switching characteristics include a 38ns fall time, 21ns turn-off delay, and 13ns turn-on delay. With a maximum power dissipation of 73W and an operating temperature range of -55°C to 150°C, it is RoHS compliant and lead-free.
Onsemi FQB6N40CTM technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 830mR |
| Drain to Source Voltage (Vdss) | 400V |
| Element Configuration | Single |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 625pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 73W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 73W |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 400V |
| Weight | 1.31247g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQB6N40CTM to view detailed technical specifications.
No datasheet is available for this part.
