N-channel MOSFET, 500V drain-source breakdown voltage, 5.5A continuous drain current, and 1.3 Ohm drain-source resistance. Features a TO-263-3 surface mount package, 130W maximum power dissipation, and 790pF input capacitance. Operating temperature range from -55°C to 150°C, with turn-on delay of 20ns and turn-off delay of 35ns. This RoHS compliant component is supplied on tape and reel.
PackageTO-263-3
Current Rating5.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB6N50TM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 5.5A |
| Current Rating | 5.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.3R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.95mm |
| Input Capacitance | 790pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 750 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 1.3R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB6N50TM Datasheet
Download the complete datasheet for Onsemi FQB6N50TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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