The FQB70N10TM_AM002 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 3.75W and a continuous drain current of 57A. This device is packaged in a TO-263-3 case and is lead free. It has a drain to source breakdown voltage of 100V and a drain to source resistance of 23mR.
PackageTO-263-3
Current Rating57A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB70N10TM_AM002 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 57A |
| Current Rating | 57A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 160ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 3.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.75W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.75W |
| Rds On Max | 23mR |
| Series | QFET™ |
| Turn-Off Delay Time | 130ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB70N10TM_AM002 Datasheet
Download the complete datasheet for Onsemi FQB70N10TM_AM002 to view detailed technical specifications.
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