The FQB7N10LTM is a surface mount N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 100V and a continuous drain current of 7.3A. The device is packaged in a TO-263-3 case and is lead free. It is RoHS compliant and has a maximum power dissipation of 40W.
PackageTO-263-3
Current Rating7.3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB7N10LTM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 7.3A |
| Current Rating | 7.3A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 290pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.75W |
| Rds On Max | 350mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 17ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB7N10LTM Datasheet
Download the complete datasheet for Onsemi FQB7N10LTM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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