
N-Channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 7.4A Continuous Drain Current, 1 Ohm Max Drain-Source On Resistance. Features include a D2PAK surface mount package, 142W max power dissipation, and 1.43nF input capacitance. Operating temperature range is -55°C to 150°C. This RoHS compliant component is supplied on an 800-piece tape and reel.
Onsemi FQB7N60TM technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 7.4A |
| Current Rating | 7.4A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 1R |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 1.43nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 142W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 600V |
| Weight | 1.31247g |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQB7N60TM to view detailed technical specifications.
No datasheet is available for this part.
