
The FQB7P06TM is a P-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 7A and a drain to source breakdown voltage of -60V. The device is packaged in a TO-263-3 surface mount package and is lead free and RoHS compliant. The FQB7P06TM has a maximum power dissipation of 45W and a power dissipation of 3.75W.
Onsemi FQB7P06TM technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 7A |
| Current Rating | -7A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 410mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 295pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.75W |
| Rds On Max | 410mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 7.5ns |
| DC Rated Voltage | -60V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQB7P06TM to view detailed technical specifications.
No datasheet is available for this part.
