P-channel Power MOSFET featuring a -200V drain-source breakdown voltage and a continuous drain current of 7.3A. This surface-mount device offers a maximum drain-source on-resistance of 690mΩ. Designed for efficient switching, it exhibits a turn-on delay of 15ns and a fall time of 42ns. The component is housed in a D2PAK package, operates within a temperature range of -55°C to 150°C, and is supplied on an 800-piece tape and reel.
PackageD2PAK
Current Rating-7.3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQB7P20TM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 7.3A |
| Current Rating | -7.3A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 690mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 690MR |
| Element Configuration | Single |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 770pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.13W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 690mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | -200V |
| Weight | 1.31247g |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB7P20TM Datasheet
Download the complete datasheet for Onsemi FQB7P20TM to view detailed technical specifications.
No datasheet is available for this part.
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