Onsemi
FQB7P20TM_F085
Power Field-Effect Transistor, 7.3A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Onsemi FQB7P20TM_F085 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 770pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.13W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 690mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | -3V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB7P20TM_F085 Datasheet
Download the complete datasheet for Onsemi FQB7P20TM_F085 to view detailed technical specifications.
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