Onsemi
FQB7P20TM_F085
Power Field-Effect Transistor, 7.3A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Onsemi FQB7P20TM_F085 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
7.3A
Drain to Source Voltage (Vdss)
200V
Input Capacitance
770pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.13W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Rds On Max
690mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
-3V
Compliance
RoHS
Compliant
Datasheet
Onsemi FQB7P20TM_F085 Datasheet
Download the complete datasheet for Onsemi FQB7P20TM_F085 to view detailed technical specifications.
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