
The FQB8N25TM is a surface mount N-CHANNEL FET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 87W and a maximum drain to source breakdown voltage of 250V. The device is RoHS compliant and lead free, packaged in a TO-263-3 case and available in quantities of 750 per reel. It has a maximum current rating of 8A and a maximum drain to source resistance of 420mR. The FQB8N25TM is a QFET device with a turn-off delay time of 11ns and a fall time of 42ns.
Onsemi FQB8N25TM technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 420mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 530pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 87W |
| Mount | Surface Mount |
| Package Quantity | 750 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 550mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 11ns |
| DC Rated Voltage | 250V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQB8N25TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
