The FQB9N15TM is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 9A and a maximum power dissipation of 75W. The device is RoHS compliant and has a package quantity of 800 units per reel. The FQB9N15TM features a drain to source breakdown voltage of 150V and a drain to source resistance of 400mR. It also has a gate to source voltage of 25V and an input capacitance of 410pF.
PackageTO-263-3
Current Rating8.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB9N15TM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 9A |
| Current Rating | 8.8A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 410pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.75W |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 22ns |
| DC Rated Voltage | 150V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB9N15TM Datasheet
Download the complete datasheet for Onsemi FQB9N15TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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