The FQB9N25TM is a surface mount N-channel MOSFET from Onsemi, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 90W and a maximum drain to source breakdown voltage of 250V. The device is RoHS compliant and lead free, with a package quantity of 800 and a packaging type of tape and reel.
PackageTO-263-3
Current Rating9.4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB9N25TM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 9.4A |
| Current Rating | 9.4A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 420mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 420mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 25ns |
| DC Rated Voltage | 250V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB9N25TM Datasheet
Download the complete datasheet for Onsemi FQB9N25TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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