P-Channel MOSFET, -250V Drain to Source Breakdown Voltage, -9.4A Continuous Drain Current, 620mΩ Drain to Source Resistance. Features 120W Max Power Dissipation, 1.18nF Input Capacitance, and 65ns Fall Time. Surface mount TO-263-3 package, supplied on 800-piece tape and reel. Operates from -55°C to 150°C, RoHS compliant.
PackageTO-263-3
Current Rating-9.4A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQB9P25TM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 9.4A |
| Current Rating | -9.4A |
| Drain to Source Breakdown Voltage | -250V |
| Drain to Source Resistance | 620mR |
| Drain to Source Voltage (Vdss) | 250V |
| Element Configuration | Single |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.18nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 620mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | -250V |
| Weight | 1.31247g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB9P25TM Datasheet
Download the complete datasheet for Onsemi FQB9P25TM to view detailed technical specifications.
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