ONSEMI

FQD10N20LTM

N-Channel MOSFET, 200V, 7.6A, 380mΩ, Logic Level, DPAK

Onsemi

FQD10N20LTM

Name: FQD10N20LTM Onsemi
Brand: Onsemi
SKU: FQD10N20LTM

N-Channel MOSFET, 200V, 7.6A, 380mΩ, Logic Level, DPAK

N-Channel Power MOSFET, Logic Level, 200V Vds, 7.6A Continuous Drain Current. Features 380mΩ maximum Drain-Source On-Resistance, 2.5W power dissipation, and 13ns turn-on delay. Packaged in a TO-252-3 (DPAK) surface-mount package, this RoHS compliant component operates from -55°C to 150°C.

PackageTO-252-3

Current Rating7.6A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FQD10N20LTM technical specifications.

General

Package/Case	TO-252-3
Continuous Drain Current (ID)	7.6A
Current Rating	7.6A
Drain to Source Breakdown Voltage	200V
Drain to Source Resistance	290mR
Drain to Source Voltage (Vdss)	200V
Drain-source On Resistance-Max	380MR
Element Configuration	Single
Fall Time	95ns
Gate to Source Voltage (Vgs)	20V
Height	2.517mm
Input Capacitance	830pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Mount	Surface Mount
Number of Channels	1
Package Quantity	2500
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.5W
Rds On Max	360mR
RoHS Compliant	Yes
Series	QFET™
Turn-Off Delay Time	50ns
Turn-On Delay Time	13ns
DC Rated Voltage	200V
Weight	0.26037g