The FQD11P06TF is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of -60V and a drain to source resistance of 185mR. The device is rated for a maximum power dissipation of 38W and a continuous drain current of 9.4A. It is packaged in a TO-252-3 package and is lead-free and RoHS compliant.
PackageTO-252-3
Current Rating-9.4A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQD11P06TF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 9.4A |
| Current Rating | -9.4A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 185mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 550pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 185mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 15ns |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD11P06TF Datasheet
Download the complete datasheet for Onsemi FQD11P06TF to view detailed technical specifications.
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