
The FQD12N20LTM-F085 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 9A and a drain to source breakdown voltage of 200V. The device is packaged in a TO-252-3 package and is lead free and RoHS compliant. It is suitable for use in automotive applications and is compliant with AEC-Q101.
Onsemi FQD12N20LTM-F085 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.08nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, QFET® |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 15ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQD12N20LTM-F085 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
