The FQD12P10TM_F085 is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2.5W and a maximum drain-source voltage of 100V. The device features a drain to source on resistance of 290mR and a continuous drain current of 9.4A. It is packaged in a TO-252-3 package and is lead free and RoHS compliant.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Onsemi FQD12P10TM_F085 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 9.4A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 290MR |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 800pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 290mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101 |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD12P10TM_F085 Datasheet
Download the complete datasheet for Onsemi FQD12P10TM_F085 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.