The FQD13N10LTF is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 100V and a drain to source resistance of 180mR. The device is RoHS compliant and lead free, with a maximum power dissipation of 40W and a power dissipation of 2.5W. It is packaged in a TO-252-3 package and is available in quantities of 2000 on tape and reel.
PackageTO-252-3
Current Rating10A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FQD13N10LTF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 72ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 520pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 180mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 22ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD13N10LTF Datasheet
Download the complete datasheet for Onsemi FQD13N10LTF to view detailed technical specifications.
No datasheet is available for this part.
Product Images
