N-Channel Power MOSFET, logic level, 100V drain-source breakdown voltage, 15.6A continuous drain current, and 100mΩ maximum drain-source on-resistance. Features a DPAK surface mount package, 2.5W maximum power dissipation, and operates within a -55°C to 150°C temperature range. This QFET® series component offers fast switching with turn-on delay of 14ns and fall time of 140ns.
PackageDPAK
Current Rating15.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQD19N10LTM technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 15.6A |
| Current Rating | 15.6A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 100mR |
| Element Configuration | Single |
| Fall Time | 140ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.3mm |
| Input Capacitance | 870pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 100V |
| Weight | 0.26037g |
| Width | 6.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD19N10LTM Datasheet
Download the complete datasheet for Onsemi FQD19N10LTM to view detailed technical specifications.
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