The FQD19N10TM_F080 is a surface mount N-channel FET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 100V and a drain to source resistance of 100mR. The device can handle a continuous drain current of 15.6A and a maximum power dissipation of 2.5W. The TO-252-3 package is suitable for surface mount applications.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FQD19N10TM_F080 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 15.6A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 780pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 100mR |
| Series | QFET™ |
| Turn-Off Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD19N10TM_F080 Datasheet
Download the complete datasheet for Onsemi FQD19N10TM_F080 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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