ONSEMI

FQD1N60TF

Datasheet

600V 1A N-CH MOSFET, 11.5R Rds On, TO-252

Onsemi

FQD1N60TF

Name: FQD1N60TF Onsemi
Brand: Onsemi
SKU: FQD1N60TF

600V 1A N-CH MOSFET, 11.5R Rds On, TO-252

N-channel MOSFET, 600V drain-source breakdown voltage, 1A continuous drain current, and 11.5 Ohm Rds On. This surface-mount component features a TO-252 package, 25ns fall time, and 7ns turn-off delay time. With a maximum power dissipation of 30W and an operating temperature range of -55°C to 150°C, it is RoHS compliant.

PackageTO-252

Current Rating1A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FQD1N60TF technical specifications.

General

Package/Case	TO-252
Continuous Drain Current (ID)	1A
Current Rating	1A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	11.5R
Drain to Source Voltage (Vdss)	600V
Dual Supply Voltage	600V
Fall Time	25ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	150pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	30W
Mount	Surface Mount
Nominal Vgs	5V
Package Quantity	2000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.5W
Rds On Max	11.5R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	QFET®
Termination	SMD/SMT
Turn-Off Delay Time	7ns
DC Rated Voltage	600V